Datasheet Summary
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N-channel TrenchMOS™ logic level FET
Rev. 01
- 25 February 2005 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.
1.2 Features s Logic level threshold s 175 °C rated s Very low on-state resistance s Surface mounted package.
1.3 Applications s DC-to-DC converters s DC motor speed control. s General purpose power switching
1.4 Quick reference data s VDS ≤ 75 V s RDSon ≤ 28 mΩ s ID ≤ 30 A s Qgd = 9 nC (typ).
2. Pinning information
Table 1: Pin 1, 2, 3 4 mb Pinning Description source gate mounting base; connected to drain...