PH5416
FEATURES
- High current (max. 1 A)
- High voltage (max. 300 V). APPLICATIONS
- Telephony applications. DESCRIPTION
PNP high-voltage transistor in a TO-92; SOT54 plastic package.
1 handbook, halfpage
PINNING PIN 1 2 3 emitter base collector DESCRIPTION
2 3
3 2 1
MAM281
Fig.1
Simplified outline (TO-92; SOT54) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot h FE f T PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC =
- 50 m A; VCE =
- 10 V IC =
- 10 m A; VCE =
- 10 V; f = 100 MHz open emitter open base CONDITIONS
- -
- - 30 15 MIN. MAX.
- 350
- 300
- 1 500 120
- MHz V V A m W UNIT
1997 Apr 22
Philips Semiconductors
Product specification
PNP high-voltage transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage...
