Datasheet4U Logo Datasheet4U.com

PH6325L - N-channel TrenchMOS logic level FET

General Description

Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Key Features

  • s Optimized for use in DC-to-DC converters s Low threshold voltage s Very low switching and conduction losses s Low thermal resistance. 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PH600S-280-12 Single output 300W ~ 600W DC-DC power module DENSEI-LAMBDA
PH600S-280-15 Single output 300W ~ 600W DC-DC power module DENSEI-LAMBDA
PH600S-280-24 Single output 300W ~ 600W DC-DC power module DENSEI-LAMBDA
PH600S-280-28 Single output 300W ~ 600W DC-DC power module DENSEI-LAMBDA
PH600S-280-3.3 Single output 300W ~ 600W DC-DC power module DENSEI-LAMBDA

Other Datasheets by NXP Semiconductors

Part Number Description
PH6030L N-channel TrenchMOS logic level FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PH6325L N-channel TrenchMOS™ logic level FET M3D748 Rev. 01 — 28 April 2004 Preliminary data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Optimized for use in DC-to-DC converters s Low threshold voltage s Very low switching and conduction losses s Low thermal resistance. 1.3 Applications s DC-to-DC converters s Voltage regulators s Switched-mode power supplies s Notebook computers. 1.4 Quick reference data s VDS ≤ 25 V s Qgd = 3.3 nC (typ) s RDSon ≤ 6.3 mΩ (VGS = 10 V) s ID ≤ 78.7 A s Qg(tot) = 13.3 nC (typ) s RDSon ≤ 9.5 mΩ (VGS = 4.5 V). 2.