PHD27NQ10T
FEATURES
- ’Trench’ technology
- Low on-state resistance
- Fast switching
- Low thermal resistance
SYMBOL
VDSS = 100 V ID = 28 A g
RDS(ON) ≤ 50 mΩ s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:- d.c. to d.c. converters
- switched mode power supplies The PHP27NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB27NQ10T is supplied in the SOT404 (D2PAK) surface mounting package. The PHD27NQ10T is supplied in the SOT428 (DPAK) surface mounting package.
PINNING
PIN 1 2 3 tab DESCRIPTION gate drain 1 source
SOT78 (TO220AB) tab
SOT404 (D2PAK) tab
SOT428 (DPAK) tab
1 23
3 drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation...
