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PHD27NQ10T - N-Channel Transistor

General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.

d.c.

to d.c.

switched mode power supplies The PHP27NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package.

Key Features

  • ’Trench’ technology.
  • Low on-state resistance.
  • Fast switching.
  • Low thermal resistance SYMBOL VDSS = 100 V ID = 28 A g RDS(ON) ≤ 50 mΩ s.

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Full PDF Text Transcription for PHD27NQ10T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PHD27NQ10T. For precise diagrams, and layout, please refer to the original PDF.

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP27NQ10T, PHB27NQ10T PHD27NQ10T QUICK REFERENCE DATA d FEATURES • ’Trench’ technology • Low...

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PHD27NQ10T QUICK REFERENCE DATA d FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL VDSS = 100 V ID = 28 A g RDS(ON) ≤ 50 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies The PHP27NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB27NQ10T is supplied in the SOT404 (D2PAK) surface mounting package. The PHD27NQ10T is supplied in the SOT428 (DPAK) surface mounting package.

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