logo

PHD38N02LT Datasheet, NXP

PHD38N02LT fet equivalent, trenchmos logic level fet.

PHD38N02LT Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 252.61KB)

PHD38N02LT Datasheet

Features and benefits

s Low on-state resistance s 2.5 V gate drive. 1.3 Applications s Linear regulator for DDR memory. 1.4 Quick reference data s VDS = 20 V s Ptot = 57.6 W s ID = 44.7 A s .

Application

s Linear regulator for DDR memory. 1.4 Quick reference data s VDS = 20 V s Ptot = 57.6 W s ID = 44.7 A s RDSon ≤ 16 mΩ .

Description

N-channel logic level field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHB38N02LT in SOT404 (D2-PAK) PHD38N02LT in SOT428 (D-PAK). 1.2 Features s Low on-state resistance s 2.5 V gate drive. 1.3 Applicat.

Image gallery

PHD38N02LT Page 1 PHD38N02LT Page 2 PHD38N02LT Page 3

TAGS

PHD38N02LT
TrenchMOS
logic
level
FET
NXP

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts