PHE13005
PHE13005 is Silicon Diffused Power Transistor manufactured by NXP Semiconductors.
description
High voltage, high speed NPN planar-passivated power switching transistor in a SOT78 plastic package intended for use in high frequency electronic lighting ballast applications
2. Features and benefits
- Fast switching
- High voltage capability of 700 V
- Low thermal resistance
3. Applications
- Electronic lighting ballasts
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
IC collector current
DC; Fig. 4; Fig. 1; Fig. 2
Ptot total power dissipation Tmb ≤ 25 °C; Fig. 3
VCESM collector-emitter peak VBE = 0 V voltage
Static characteristics h FE
DC current gain
IC = 1 A; VCE = 5 V; Tmb = 25 °C;
Fig. 11
IC = 2 A; VCE = 5 V; Tmb = 25 °C; Fig. 11
Min Typ Max Unit
- - 4A
- - 75 W
- - 700 V
12 20 40
10 17 28
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NXP Semiconductors
5. Pinning information
Table 2. Pinning information Pin Symbol Description
Simplified outline
1 B base mb
2 C collector
3 E emitter mb C mounting base; connected to collector
Silicon diffused power transistor
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