PHP45N03LT
Description
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance.
Key Features
- Very low on-state resistance
- Fast switching
- Stable off-state characteristics
- High thermal cycling performance
- Low PHP45N03LT SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 45 A g RDS(ON) ≤ 24 mΩ (VGS = 5 V) RDS(ON) ≤ 21 mΩ (VGS = 10 V) s
