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PLB16004U Datasheet

Manufacturer: NXP Semiconductors
PLB16004U datasheet preview

PLB16004U Details

Part number PLB16004U
Datasheet PLB16004U Datasheet PDF (Download)
File Size 93.17 KB
Manufacturer NXP Semiconductors
Description Microwave power transistor
PLB16004U page 2 PLB16004U page 3

PLB16004U Overview

handbook, 4 columns 1 c b e 2 Top view MAM112 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with base connected to flange. Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide.

PLB16004U Key Features

  • Diffused emitter ballasting resistors improve excellent current sharing and withstanding a high VSWR
  • Interdigitated mon-base structure provides high emitter efficiency
  • Gold metallization with barrier realizes very stable characteristics and excellent lifetime
  • Multicell geometry gives good balance of dissipated power and low thermal resistance
  • Internal input and output prematching networks allow an easier design of circuits

PLB16004U Applications

  • SOT437A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
  • toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or di

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