PLB16004U Datasheet - NXP

Microwave power transistor

PLB16004U Features

* Diffused emitter ballasting resistors improve excellent current sharing and withstanding a high VSWR

* Interdigitated common-base structure provides high emitter efficiency

* Gold metallization with barrier realizes very stable characteristics and excellent lifetime

PLB16004U General Description

handbook, 4 columns 1 c b e 2 Top view MAM112 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with base connected to flange. Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials .

PLB16004U Datasheet (93.17 KB)

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PLB16004U

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NXP ↗

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93.17 KB

Description:

Microwave power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET www.DataSheet4U.com PLB16004U Microwave power transistor Product speciﬁcation Supersedes data of December 1994 1.

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PLB16004U Microwave power transistor NXP

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PLB16004U Features

PLB16004U General Description

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