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PMBFJ174; PMBFJ175;
PMBFJ176; PMBFJ177
P-channel silicon field-effect transistors
Rev. 3.0 — 24 January 2020
Product data sheet
1 Product profile
1.1 General description
Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.
1.2 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS VGSo -IG Ptot
drain-source voltage
gate-source voltage
gate current
total power dissipation
up to Tamb = 25 ° C
-IDSS drain current
-VDS = 15 V; VGS = 0 PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
RDS on drain-source ONresistance
-VDS = 0.
PMBFJ174 Datasheet
