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PMBFJ308 - N-channel transistor

General Description

Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package.

This device is sensitive to ElectroStatic Discharge (ESD).

Therefore care should be taken during transport and handling.

Key Features

  • Low noise.
  • Interchangeability of drain and source connections.
  • High gain. 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOT23 PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 4 — 20 September 2011 Product data sheet 1. Product profile CAUTION 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits  Low noise  Interchangeability of drain and source connections  High gain. 1.3 Applications  AM input stage in car radios  VHF amplifiers  Oscillators and mixers. 1.4 Quick reference data Table 1.