PMEG050V150EPD Datasheet | NXP Semiconductors

description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a CFP15 (SOT1289) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits - Average forward current: IF(AV) ≤ 15 A - Reverse voltage: VR ≤ 50 V - Extremely low forward voltage - High power capability due to clip-bonding technology and heat sink - Small and thin SMD power plastic package, typical height 0.78 mm - AEC-Q101 qualified 3. Applications - Low voltage rectification - High efficiency DC-to-DC conversion - Switch mode power supply - Freewheeling application - Reverse polarity protection - Low power consumption application 4. Quick reference data Table 1. Symbol IF(AV) VR VF Quick reference data Parameter average forward current reverse voltage forward voltage IR reverse current Conditions δ = 0.5; f = 20 k Hz; Tsp ≤ 160 °C; square wave Tj = 25 °C IF = 15 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C; pulsed VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C; pulsed VR = 50 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C; pulsed Min Typ Max Unit - - 15 A - - 50 V - 450 500 m V - 30 70 µA - 260 1000 µA Scan or click this QR code to view the latest information for this product NXP Semiconductors 50 V, 15 A low VF MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 A anode 2 A anode 3 K cathode Simplified...