• Part: PMEG10020ELR
  • Description: 2A low leakage current Schottky barrier rectifier
  • Manufacturer: NXP Semiconductors
  • Size: 206.01 KB
Download PMEG10020ELR Datasheet PDF
NXP Semiconductors
PMEG10020ELR
description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits - Average forward current: IF(AV) ≤ 2 A - Reverse voltage: VR ≤ 100 V - Low forward voltage: VF = 770 m V - High power capability due to clip-bonding technology - Extremely low leakage current IR = 40 n A - High temperature Tj ≤ 175 °C - AEC-Q101 qualified 3. Applications - Low voltage rectification - High efficiency DC-to-DC conversion - Switch mode power supply - Reverse polarity protection - Low power consumption applications 4. Quick reference data Table 1. Symbol IF(AV) VR VF Quick reference data Parameter average forward current reverse voltage forward voltage IR reverse current Conditions δ = 0.5; f = 20 k Hz; Tsp ≤ 160 °C; square wave Tj = 25 °C IF = 2 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C VR = 100 V; tp ≤ 300 µs; δ...