PMEG4010AESB Key Features
- Average forward current: IF(AV) ≤ 1 A
- Reverse voltage: VR ≤ 40 V
- Low forward voltage, typical: VF = 435 mV
- Low reverse current, typical: IR = 325 µA
- Package height typ. 270 µm
- Part: PMEG4010AESB
- Manufacturer: NXP Semiconductors (official site)
- Size: 201.00 KB
Other PMEG4010AESB Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Nexperia |
PMEG4010AESB | MEGA Schottky barrier rectifier |
NXP Semiconductors |
PMEG4010BEA | 1A very low VF MEGA Schottky barrier rectifier |
|
Nexperia |
PMEG4010BEA | 1A very low VF Schottky barrier rectifier |
|
NXP Semiconductors |
PMEG4010BEV | 1A very low VF MEGA Schottky barrier rectifier |
|
Nexperia |
PMEG4010CEA | MEGA Schottky barrier rectifier |
PMEG4010AESB Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993) Surface-Mounted Device (SMD) package.