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PMEG6030ELP Key Features

  • Extremely low leakage current IR = 340 nA
  • Average forward current: IF(AV) ≤ 3 A
  • Reverse voltage: VR ≤ 60 V
  • Low forward voltage VF = 600 mV
  • High power capability due to clip-bonding technology
  • High temperature Tj ≤ 175 °C
  • Small and flat lead SMD plastic package
  • AEC-Q101 qualified

Other PMEG6030ELP Datasheets

Manufacturer Part Number Description
nexperia Logo Nexperia PMEG6030ELP Schottky barrier rectifier
NXP Semiconductors Logo NXP Semiconductors PMEG6030EP 3A low VF MEGA Schottky barrier rectifier
nexperia Logo Nexperia PMEG6030EP 60V 3A Schottky barrier rectifier
NXP Semiconductors Logo NXP Semiconductors PMEG6030ETP Schottky barrier rectifier
nexperia Logo Nexperia PMEG6030ETP Schottky barrier rectifier

View all PMEG6030ELP datasheets →

PMEG6030ELP Description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package.