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PMR290XN
N-channel µTrenchMOS™ extremely low level FET
M3D173
Rev. 01 — 3 March 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Surface mounted package s Low on-state resistance s Footprint 63% smaller than SOT23 s Low threshold voltage.
1.3 Applications
s Driver circuits s Switching in portable appliances.
1.4 Quick reference data
s VDS ≤ 20 V s Ptot ≤ 0.53 W s ID ≤ 0.97 A s RDSon ≤ 350 mΩ.
2. Pinning information
Table 1: Pin 1 2 3 Pinning - SOT416 (SC-75), simplified outline and symbol Description gate (g) source (s) drain (d)
g 1 Top view 2
MBK090 MBB076
Simplified outline
3
Symbol
d
s
SOT416 (SC-75)
3.
PMR290XN Datasheet
