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PMV117EN - uTrenchMOS enhanced logic level FET

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.

Features

  • s Logic level threshold s Subminiature surface-mounted package s Very fast switching 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PMV117EN µTrenchMOS™ enhanced logic level FET Rev. 02 — 7 April 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology. 1.2 Features s Logic level threshold s Subminiature surface-mounted package s Very fast switching 1.3 Applications s Battery management s High-speed switch s Low power DC-to-DC converter 1.4 Quick reference data s VDS ≤ 30 V s RDSon ≤ 117 mΩ (VGS = 10 V) s ID ≤ 2.5 A s Ptot ≤ 0.83 W 2. Pinning information Table 1: Pin 1 2 3 Pinning Description gate (G) source (S) drain (D) 1 2 3 D Simplified outline Symbol G SOT23 mbb076 S www.DataSheet4U.com www.DataSheet4U.
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