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PMV30UN - uTrenchMOS ultra low level FET

Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Product availability: PMV30UN in SOT23.

Features

  • s Surface mount package s Fast switching. 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PMV30UN µTrenchMOS™ ultra low level FET Rev. 01 — 25 June 2003 M3D088 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV30UN in SOT23. 1.2 Features s Surface mount package s Fast switching. 1.3 Applications s Battery management s High-speed switches. 1.4 Quick reference data s VDS ≤ 20 V s Ptot ≤ 1.9 W s ID ≤ 5.7 A s RDSon ≤ 36 mΩ 2. Pinning information Table 1: Pin 1 2 3 Pinning - SOT23 simplified outline and symbol Description gate (g) source (s) drain (d) g s Simplified outline 3 Symbol d 1 Top view 2 MSB003 MBB076 SOT23 www.DataSheet4U.com www.DataSheet4U.com Philips Semiconductors PMV30UN µTrenchMOS™ ultra low level FET 3.
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