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PMV31XN - uTrenchMOS extremely low level FET

Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Product availability: PMV31XN in SOT23.

2.

Features

  • s s s s TrenchMOS™ technology Very fast switching Low threshold voltage Surface mount package. 3.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com PMV31XN µTrenchMOS™ extremely low level FET Rev. 01 — 26 February 2003 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV31XN in SOT23. 2. Features s s s s TrenchMOS™ technology Very fast switching Low threshold voltage Surface mount package. 3. Applications s Battery powered motor control s High-speed switch in set top box power supplies. 4. Pinning information Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g) 3 d Simplified outline Symbol source (s) drain (d) 1 Top view 2 MSB003 g s MBB076 SOT23 www.DataSheet4U.com www.DataSheet4U.com Philips Semiconductors PMV31XN µTrenchMOS™ extremely low level FET 5.
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