Datasheet Summary
SOT23
N-channel TrenchMOS logic level FET
Rev. 2
- 7 November 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in puting, munications, consumer and industrial applications.
1.2 Features and benefits
- Logic-level patible
- Very fast switching
- Trench MOSFET technology
1.3 Applications
- Battery management
- High-speed switching
1.4 Quick reference data
Table 1. Symbol VDS ID
Quick reference data Parameter drain-source voltage drain current
VGS gate-source voltage
Static...
