PMV45EN2 Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
PMV45EN2 Key Features
- Logic level patible
- Very fast switching
- Trench MOSFET technology
- Enhanced power dissipation capability of 1115 mW