Download PMZ290UNE Datasheet PDF
PMZ290UNE page 2
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PMZ290UNE page 3
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PMZ290UNE Key Features

  • Trench MOSFET technology
  • Low threshold voltage
  • Very fast switching
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM
  • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm

PMZ290UNE Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.