PMZ350UPE Key Features
- Trench MOSFET technology
- Low threshold voltage
- Very fast switching
- ElectroStatic Discharge (ESD) protection > 1.8 kV HBM
- Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm
- Part: PMZ350UPE
- Manufacturer: NXP Semiconductors (official site)
- Size: 201.17 KB
Other PMZ350UPE Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Nexperia |
PMZ350UPE | P-channel MOSFET |
NXP Semiconductors |
PMZ350XN | N-channel TrenchMOS standard level FET |
PMZ350UPE Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.