PMZ370UNE Key Features
- Trench MOSFET technology
- Low threshold voltage
- Very fast switching
- ElectroStatic Discharge (ESD) protection > 2 kV HBM
- Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm
- Part: PMZ370UNE
- Manufacturer: NXP Semiconductors (official site)
- Size: 208.71 KB
Related NXP Semiconductors Datasheets
| Part Number | Description |
|---|---|
| PMZ320UPE | P-channel Trench MOSFET |
| PMZ350UPE | P-channel Trench MOSFET |
| PMZ390UNE | N-channel Trench MOSFET |
| PMZ1200UPE | P-channel Trench MOSFET |
| PMZ130UNE | N-channel Trench MOSFET |
PMZ370UNE Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.