PMZB150UNE Key Features
- Very fast switching
- Low threshold voltage
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection: 2 kV HBM
- Ultra thin package profile of 0.37 mm
- Part: PMZB150UNE
- Manufacturer: NXP Semiconductors (official site)
- Size: 219.01 KB
Other PMZB150UNE Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Nexperia |
PMZB150UNE | N-channel MOSFET |
PMZB150UNE Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.