PMZB550UNE Datasheet, NXP

* Trench MOSFET technology
* Low threshold voltage
* Very fast switching
* ElectroStatic Discharge (ESD) protection > 2 kV HBM
* Ultra thin package pr.

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 4. Quick reference d.

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
* Trench MOSFET technology
* Low th.