PSMN010-30MLD Datasheet N-channel MOSFET

Manufacturer: NXP Semiconductors

PSMN010-30MLD n-channel mosfet by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	PSMN010-30MLD
Manufacturer	NXP Semiconductors
File Size	270.89 KB
Description	N-channel MOSFET
Datasheet	PSMN010-30MLD Datasheet

General Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.

NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current.

NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Overview

LFPAK33 PSMN010-30MLD N-channel 30 V, 10 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 19 October 2015 Product data sheet 1.

Key Features

Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies.
Superfast switching with soft-recovery; s-factor > 1.
Low spiking and ringing for low EMI designs.
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C.
Optimised for 4.5 V gate drive.
Low parasitic inductance and r.

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