PSMN040-100MSE Datasheet | NXP Semiconductors

description New standards and proprietary approaches are enabling Power-over-Ethernet (Po E) systems capable of delivering up to 90W to each powered device (PD). Such solutions place increased demands on the power sourcing equipment (PSE) in terms of “soft-start”, thermal management and power density requirements. 2. Features and benefits - Enhanced forward biased safe operating area for superior linear mode operation - Low Rdson for low conduction losses - Ultra reliable LFPAK33 package for superior thermal and ruggedness performance - Very low IDSS 3. Applications - High power Po E applications (60W and higher) - IEEE802.3at and proprietary solutions 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tj = 25 °C; VGS = 10 V; Fig. 1 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 10 A; Tj = 25 °C; resistance Fig. 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 10 A; VDS = 50 V; Tj = 25 °C; Fig. 14; Fig. 15 Avalanche Ruggedness EDS(AL)S non-repetitive drainsource avalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 30 A; Vsup ≤ 100 V; RGS = 50 Ω; unclamped; Fig. 3 Min Typ Max Unit - - 100 V - - 30 A - - 91 W - 29.4 36.6 mΩ - 10.7 - n C - 30 - n C - - 54 m J Scan or click this QR code to view the latest information for this product NXP...