PSMN041-80YL
PSMN041-80YL is MOSFET manufactured by NXP Semiconductors.
description
Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, munications and domestic equipment.
2. Features and benefits
- High efficiency due to low switching and conduction losses
- Suitable for logic level gate drive
- LFPAK56 package is footprint patible with other Power-SO8 types
- Qualified to 175 °C
3. Applications
- DC-to-DC converters
- Load switch
- TV power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon drain-source on-state resistance
VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 12
VGS = 10 V; ID = 5 A; Tj = 175 °C; Fig. 13; Fig. 12
Dynamic characteristics
QGD QG(tot) gate-drain charge total gate charge
VGS = 10 V; ID = 5 A; VDS = 64 V; Tj = 25 °C; Fig. 14; Fig. 15
Min Typ Max Unit
- - 80 V
- - 25 A
- - 64 W
- 32.8 41 mΩ
- - 103 mΩ
- 4.3
- n C
- 21.9
- n C
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NXP Semiconductors
N-channel 80 V 41 mΩ logic level MOSFET in...
