PSMN7R5-30YLD Datasheet N-channel MOSFET

Manufacturer: NXP Semiconductors

PSMN7R5-30YLD n-channel mosfet by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	PSMN7R5-30YLD
Manufacturer	NXP Semiconductors
File Size	282.03 KB
Description	N-channel MOSFET
Datasheet	PSMN7R5-30YLD Datasheet

General Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.

NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current.

NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Overview

LFPAK56 PSMN7R5-30YLD N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 7 February 2014 Product data sheet 1.

Key Features

Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies.
Superfast switching with soft-recovery; s-factor > 1.
Low spiking and ringing for low EMI designs.
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C.
Optimised for 4.5 V gate drive.
Low parasitic inductance and resistance.
High reliability clip bonded and solder die attach Power SO8 package; no gl.

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