TEA2206T Datasheet | NXP Semiconductors

description The TEA2206T is an active bridge rectifier controller for replacing the two low-side diodes in the traditional diode bridge with MOSFETs. Using the TEA2206T with low-ohmic high-voltage external MOSFETs significantly improves the efficiency of the power converter as the typical rectifier-diode forwardconduction losses are reduced by 50 %. Efficiency can improve up to about 0.7 % at 90 V (AC) mains voltage. The TEA2206T is fabricated in a silicon-on-insulator (SOI) process. 2 Features and benefits 2.1 Efficiency features - Forward conduction losses of the diode rectifier bridge are reduced - Very low IC power consumption (2 m W) 2.2 Application features - Directly drives two rectifier MOSFETs - Very low external part count - Integrated X-capacitor discharge (2 m A) - Self-supplying - SO8 package 2.3 Control features - Undervoltage lockout - Drain-source overvoltage protection for all external power MOSFETs - Gate pull-down currents at startup for all external power MOSFETs 3 Applications The TEA2206T is intended for power supplies with a boost-type power-factor controller as a first stage. The second stage can be a resonant controller, a flyback controller, or any other controller topology. It can be used in all power supplies requiring high efficiency: - Adapters - Power supplies for desktop PC and all-in-one PC - Power supplies for television - Power supplies for servers NXP Semiconductors Active bridge rectifier controller 4 Ordering information Table 1. Ordering information Type number Package Name Description TEA2206T/1 SO8 plastic small outline package; 8 leads; body width 3.9 mm 5 Marking Table 2. Marking Type number TEA2206T/1 Marking code TEA2206 6 Block diagram Version SOT96-1 L GATELL CONTROL R...