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11N06LT PHB11N06LT

11N06LT Description

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET .
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology.

11N06LT Features

* ’Trench’ technology
* Very low on-state resistance
* Fast switching
* Stable off-state characteristics www. DataSheet4U. com
* High thermal cycling performance
* Low thermal resistance PHB11N06LT, PHD11N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V

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PHB11N06LT NXP Semiconductors
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