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2708AF - BU2708AF

General Description

High voltage, high speed switching npn transistor in a plastic full-pack envelope.

Intended for use in horizontal of colour television receivers.

Key Features

  • exceptional tolerance to base drive and collector current load variations, resulting in a low worst-case dissipation. Designed to withstand VCES pulses up to 1700 V. QUICK.

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AF GENERAL DESCRIPTION www.datasheet4u.com deflection circuits High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal of colour television receivers. Features exceptional tolerance to base drive and collector current load variations, resulting in a low worst-case dissipation. Designed to withstand VCES pulses up to 1700 V.