34NQ10T
Description
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.
Key Features
- Low on-state resistance
- Fast switching
- Low SYMBOL VDSS = 100 V ID = 35 A g RDS(ON) ≤ 40 mΩ s
- Part: 34NQ10T
- Description: N-channel transistor
- Category: Transistor
- Manufacturer: NXP Semiconductors
- Size: 113.90 KB