2-input AND gate with open-drain output
Rev. 01 — 26 September 2005
Product data sheet
1. General description
The 74AHC1G09 is a high-speed Si-gate CMOS device.
The 74AHC1G09 provides the 2-input AND function with open-drain output.
The output of the 74AHC1G09 is an open drain and can be connected to other open-drain
outputs to implement active-LOW, wired-OR or active-HIGH wired-AND functions. For
digital operation this device must have a pull-up resistor to establish a logic HIGH level.
s High noise immunity
s ESD protection:
x HBM JESD22-A114-C exceeds 2000 V
x MM JESD22-A115-A exceeds 200 V
s Low power dissipation
s Speciﬁed from −40 °C to +85 °C and from −40 °C to +125 °C.
3. Quick reference data
Table 1: Quick reference data
GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns.
propagation delay VCC = 4.5 V to 5.5 V;
A and B to Y
CL = 15 pF
Ci input capacitance
CPD power dissipation CL = 50 pF; fi = 1 MHz;
VI = GND to VCC
Min Typ Max Unit
- 3.2 5.5 ns
- 1.5 10 pF
 CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = number of inputs switching;
(CL × VCC2 × fo) = dissipation due to the output if the combination of the pull up voltage and resistance
results in VCC at the output.