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74AHC1G09 - 2-input AND gate

NXP Semiconductors

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Datasheet Details

Part number	74AHC1G09
Manufacturer	NXP ↗ Semiconductors
File Size	91.23 KB
Description	2-input AND gate
Datasheet	74AHC1G09_NXPSemiconductors.pdf

74AHC1G09 Product details

Description

The 74AHC1G09 is a high-speed Si-gate CMOS device.

Features

s High noise immunity s ESD protection: x HBM JESD22-A114-C exceeds 2000 V x MM JESD22-A115-A exceeds 200 V s Low power dissipation s Speciﬁed from.
40 °C to +85 °C and from.
40 °C to +125 °C. 3. Quick reference data Table 1: Quick reference data GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns. Symbol tPZL, tPLZ Ci CPD [1] Parameter propagation delay A and B to Y input capacitance power dissipation capacitance Conditions VCC = 4.5 V to 5.5 V; CL = 15 pF CL = 50 pF; fi = 1 MHz; VI =.

📁 74AHC1G09 Similar Datasheet

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Published: Apr 28, 2010 |