74AHC1G09 Datasheet | NXP Semiconductors

2-input AND gate with open-drain output Rev. 01 - 26 September 2005 .. Product data sheet 1. General description The 74AHC1G09 is a high-speed Si-gate CMOS device. The 74AHC1G09 provides the 2-input AND function with open-drain output. The output of the 74AHC1G09 is an open drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND functions. For digital operation this device must have a pull-up resistor to establish a logic HIGH level. 2. Features s High noise immunity s ESD protection: x HBM JESD22-A114-C exceeds 2000 V x MM JESD22-A115-A exceeds 200 V s Low power dissipation s Specified from - 40 °C to +85 °C and from - 40 °C to +125 °C. 3. Quick reference data Table 1: Quick reference data GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns. Symbol t PZL, t PLZ Ci CPD [1] Parameter propagation delay A and B to Y input capacitance power dissipation capacitance Conditions VCC = 4.5 V to 5.5 V; CL = 15 p F CL = 50 p F; fi = 1 MHz; VI = GND to VCC [1] Min - Typ 3.2 1.5 5 Max 5.5 10 - Unit ns p F p F CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in p F; VCC = supply voltage in Volts; N = number of inputs switching; (CL × VCC2 × fo) = dissipation due to the output if the bination of the pull up voltage and resistance results in VCC at the output. Philips Semiconductors .. 2-input AND gate with open-drain output 4. Ordering information Table 2: Ordering information Package Temperature range Name 74AHC1G09GW - 40 °C to +125 °C TSSOP5 Description plastic thin shrink small outline package; 5 leads; body width 1.25 mm Version SOT353-1 Type number 5. Marking Table 3: Marking Marking code A9 Type number 74AHC1G09GW 6. Functional...