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74AHC1G09 - 2-input AND gate

Description

The 74AHC1G09 is a high-speed Si-gate CMOS device.

The 74AHC1G09 provides the 2-input AND function with open-drain output.

The output of the 74AHC1G09 is an open drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND functions.

Features

  • s High noise immunity s ESD protection: x HBM JESD22-A114-C exceeds 2000 V x MM JESD22-A115-A exceeds 200 V s Low power dissipation s Specified from.
  • 40 °C to +85 °C and from.
  • 40 °C to +125 °C. 3. Quick reference data Table 1: Quick reference data GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns. Symbol tPZL, tPLZ Ci CPD [1] Parameter propagation delay A and B to Y input capacitance power dissipation capacitance Conditions VCC = 4.5 V to 5.5 V; CL = 15 pF CL = 50 pF; fi = 1 MHz; VI =.

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Note: The manufacturer provides a single datasheet file (74AHC1G09_NXPSemiconductors.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 74AHC1G09
Manufacturer NXP Semiconductors
File Size 91.23 KB
Description 2-input AND gate
Datasheet download datasheet 74AHC1G09 Datasheet
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Full PDF Text Transcription

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74AHC1G09 2-input AND gate with open-drain output Rev. 01 — 26 September 2005 www.DataSheet4U.com Product data sheet 1. General description The 74AHC1G09 is a high-speed Si-gate CMOS device. The 74AHC1G09 provides the 2-input AND function with open-drain output. The output of the 74AHC1G09 is an open drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND functions. For digital operation this device must have a pull-up resistor to establish a logic HIGH level. 2. Features s High noise immunity s ESD protection: x HBM JESD22-A114-C exceeds 2000 V x MM JESD22-A115-A exceeds 200 V s Low power dissipation s Specified from −40 °C to +85 °C and from −40 °C to +125 °C. 3.
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