9NQ20T
FEATURES
- ’Trench’ technology
- Low on-state resistance
- Fast switching
- Low thermal resistance
SYMBOL d
QUICK REFERENCE DATA VDSS = 200 V ID = 5.2 A g
RDS(ON) ≤ 400 mΩ s
..
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and puter monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHX9NQ20T is supplied in the SOT186A (FPAK) conventional leaded package
PINNING
PIN 1 2 3 case gate drain source isolated DESCRIPTION
SOT186A (FPAK) case
SOT186 (FPAK) case
1 2 3
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj =...
