9NQ20T Datasheet, NXP Semiconductors

* ’Trench’ technology
* Low on-state resistance
* Fast switching
* Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 5.2 A g RDS(O.

The PHX9NQ20T is supplied in the SOT186A (FPAK) conventional leaded package PINNING PIN 1 2 3 case gate drain source i.

N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpos.