* I High switching speed: trr ≤ 50 ns I Low leakage current I Repetitive peak reverse voltage: VRRM ≤ 300 V I Excellent coplanarity and improved thermal behavior I Low capacitance: Cd ≤ 2 pF I Reverse voltage: VR ≤ 300 V I Very small and flat lead SMD plastic package 1.3 Applications I High-speed swit
BAS21J
NXP ↗ Semiconductors
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Single high-speed switching diode.
www.DataSheet4U.com BAS21J Single high-speed switching diode Rev. 01 8 March 2007 Product data sheet 1. Product profile 1.1 General descrip.
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