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BF1214 - Dual N-channel dual gate MOSFET

General Description

The BF1214 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads.

The source and substrate are interconnected.

Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC.

Key Features

  • I Two low noise gain controlled amplifiers in a single package; both with a partly integrated bias I Superior cross modulation performance during AGC I High forward transfer admittance I High forward transfer admittance to input capacitance ratio I Both amplifiers optimized for VHF.

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Other Datasheets by NXP Semiconductors

Part Number Description
BF1207 Dual N-channel dual gate MOSFET

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BF1214 Dual N-channel dual gate MOSFET Rev. 01 — 30 October 2007 Product data sheet 1. Product profile CAUTION 1.1 General description The BF1214 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package. This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.