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BFU630F Datasheet

Manufacturer: NXP Semiconductors
BFU630F datasheet preview

BFU630F Details

Part number BFU630F
Datasheet BFU630F_NXPSemiconductors.pdf
File Size 307.60 KB
Manufacturer NXP Semiconductors
Description NPN wideband silicon RF transistor
BFU630F page 2 BFU630F page 3

BFU630F Overview

NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices.

BFU630F Key Features

  • Low noise high gain microwave transistor
  • Noise figure (NF) = 0.85 dB at 2.4 GHz
  • High maximum stable gain 26 dB at 1.8 GHz
  • 40 GHz fT silicon technology

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