BFU660F Datasheet - NXP Semiconductors

NPN wideband silicon RF transistor

BFU660F Features

* Low noise high linearity RF transistor

* High output third-order intercept point 27 dBm at 1.8 GHz

* 40 GHz fT silicon technology 1.3 Applications

* Analog/digital cordless applications

* X-band high output buffer amplifier

* ZigBee

* SDARS s

BFU660F General Description

NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20.

BFU660F Datasheet (122.95 KB)

BFU660F Datasheet Preview — Preview of BFU660F PDF

Datasheet Details

Part number:

BFU660F

Manufacturer:

NXP ↗ Semiconductors

File Size:

122.95 KB

Description:

Npn wideband silicon rf transistor.

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BFU660F NPN wideband silicon transistor NXP Semiconductors

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BFU660F Features

BFU660F General Description

Datasheet Details

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Description:

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