BFU660F
Description
BFU660F - plastic surface-mounted flat pack package; reverse pinning; 4 leads Version SOT343F BFU660F Product data sheet All information provided in this document is subject to legal disclaimers.
Key Features
- Low noise high linearity RF transistor
- High output third-order intercept point 27 dBm at 1.8 GHz
- 40 GHz fT silicon technology 1.3 Applications
- Analog/digital cordless applications
- X-band high output buffer amplifier
- SDARS second stage LNA
- LTE, cellular, UMTS NXP Semiconductors BFU660F NPN wideband silicon RF transistor 1.4 Quick reference data Table
- 17 [1] Tsp is the temperature at the solder point of the emitter lead. [2] Gp(max) is the maximum power gain, if K >
- If K < 1 then Gp(max) = MSG. Max Unit 16 V 5.5 V 2.5 V 60 mA 225 mW 180
