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BFU660F - NPN wideband silicon RF transistor

General Description

NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

This device is sensitive to ElectroStatic Discharge (ESD).

Observe precautions for handling electrostatic sensitive devices.

Overview

BFU660F NPN wideband silicon RF transistor Rev.

1 — 11 January 2011 Product data sheet 1.

Product profile CAUTION 1.

Key Features

  • Low noise high linearity RF transistor.
  • High output third-order intercept point 27 dBm at 1.8 GHz.
  • 40 GHz fT silicon technology 1.3.