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BFU660F Datasheet

NPN wideband silicon RF transistor

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BFU660F
NPN wideband silicon RF transistor
Rev. 1 — 11 January 2011
Product data sheet
1. Product profile
CAUTION
1.1 General description
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
1.2 Features and benefits
„ Low noise high linearity RF transistor
„ High output third-order intercept point 27 dBm at 1.8 GHz
„ 40 GHz fT silicon technology
1.3 Applications
„ Analog/digital cordless applications
„ X-band high output buffer amplifier
„ ZigBee
„ SDARS second stage LNA
„ LTE, cellular, UMTS
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NXP Semiconductors Electronic Components Datasheet

BFU660F Datasheet

NPN wideband silicon RF transistor

No Preview Available !

www.DataSheet.co.kr
NXP Semiconductors
BFU660F
NPN wideband silicon RF transistor
1.4 Quick reference data
Table 1.
Symbol
VCBO
VCEO
VEBO
IC
Ptot
hFE
Quick reference data
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
CCBS
fT
collector-base capacitance
transition frequency
IP3O
Gp(max)
output third-order intercept
point
maximum power gain
NF noise figure
PL(1dB)
output power at 1 dB gain
compression
Conditions
open emitter
open base
open collector
Tsp 90 °C
IC = 10 mA; VCE = 2 V;
Tj = 25 °C
VCB = 2 V; f = 1 MHz
IC = 20 mA; VCE = 1 V;
f = 2 GHz; Tamb = 25 °C
IC = 40 mA; VCE = 4 V;
f = 5.8 GHz; Tamb = 25 °C
IC = 30 mA; VCE = 1 V;
f = 1.8 GHz; Tamb = 25 °C
IC = 6 mA; VCE = 2 V;
f = 1.8 GHz; ΓS = Γopt;
Tamb = 25 °C
IC = 60 mA; VCE = 4 V;
ZS = ZL = 50 Ω;
f = 1.8 GHz; Tamb = 25 °C
Min Typ
--
--
--
- 30
[1] -
-
90 135
- 138
- 21
- 28
[2] -
24
- 0.65
- 17
[1] Tsp is the temperature at the solder point of the emitter lead.
[2] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG.
Max Unit
16 V
5.5 V
2.5 V
60 mA
225 mW
180
- fF
- GHz
- dBm
- dB
- dB
- dBm
2. Pinning information
Table 2.
Pin
1
2
3
4
Discrete pinning
Description
emitter
base
emitter
collector
Simplified outline Graphic symbol
34
4
21
2
1, 3
mbb159
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BFU660F
-
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Version
SOT343F
BFU660F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 January 2011
© NXP B.V. 2011. All rights reserved.
2 of 12
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Part Number BFU660F
Description NPN wideband silicon RF transistor
Maker NXP Semiconductors
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