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BFU690F Datasheet

NPN wideband silicon RF transistor

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BFU690F
NPN wideband silicon RF transistor
Rev. 2 — 14 March 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT343F package.
1.2 Features and benefits
Low noise high linearity microwave transistor
High output third-order intercept point 34 dBm at 1.8 GHz
40 GHz fT silicon technology
1.3 Applications
Ka band oscillators DRO’s
C-band high output buffer amplifier
ZigBee
LTE, cellular, UMTS
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCBO
VCEO
VEBO
IC
Ptot
hFE
CCBS
fT
Gp(max)
NF
PL(1dB)
collector-base voltage
open emitter
-
collector-emitter voltage
open base
-
emitter-base voltage
open collector
-
collector current
-
total power dissipation
Tsp 85 C
[1] -
DC current gain
IC = 20 mA; VCE = 2 V; Tj = 25 C
90
collector-base capacitance
VCB = 2 V; f = 1 MHz
-
transition frequency
IC = 60 mA; VCE = 1 V; f = 2 GHz;
Tamb = 25 C
-
maximum power gain
IC = 60 mA; VCE = 1 V; f = 1.8 GHz;
Tamb = 25 C
[2] -
noise figure
IC = 15 mA; VCE = 2 V; f = 1.8 GHz; S = opt -
output power at 1 dB gain compression IC = 70 mA; VCE = 4 V; ZS = ZL = 50 ;
f = 1.8 GHz; Tamb = 25 C
-
- 16 V
- 5.5 V
- 2.5 V
70 100 mA
- 490 mW
135 180
404 - fF
18 - GHz
20.5 - dB
0.65 -
22 -
dB
dBm
[1] Tsp is the temperature at the solder point of the emitter lead.
[2] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG).


NXP Semiconductors Electronic Components Datasheet

BFU690F Datasheet

NPN wideband silicon RF transistor

No Preview Available !

NXP Semiconductors
BFU690F
NPN wideband silicon RF transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
Discrete pinning
Description
emitter
base
emitter
collector
Simplified outline Graphic symbol


 


PEE
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BFU690F
-
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Version
SOT343F
4. Marking
Table 4. Marking
Type number
BFU690F
Marking
D4*
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
Tsp 85 C
-
-
-
-
[1] -
65
-
[1] Tsp is the temperature at the solder point of the emitter lead.
Max
16
5.5
2.5
100
490
+150
150
Unit
V
V
V
mA
mW
C
C
BFU690F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 14 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
2 of 12


Part Number BFU690F
Description NPN wideband silicon RF transistor
Maker NXP Semiconductors
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BFU690F Datasheet PDF






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