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BGU2003 Datasheet SiGe MMIC amplifier

Manufacturer: NXP Semiconductors

General Description

Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package.

Marking code: A6 handbook, halfpage BGU2003 PINNING PIN 1 2 3 4 GND RF in CTRL (bias current control) VS + RF out DESCRIPTION 3 4 CTRL VS+RFout BIAS CIRCUIT 2 Top view 1 MAM427 RFin GND Fig.1 Simplified outline (SOT343R) and symbol.

QUICK REFERENCE DATA SYMBOL VS IS MSG NF PARAMETER DC supply voltage DC supply current maximum stable gain noise figure CONDITIONS RF input AC coupled VVS-OUT = 2.5 V;

Overview

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BGU2003 SiGe MMIC amplifier Preliminary specification 2002 May 17 www.DataSheet4U.

Key Features

  • Low current.
  • Very high power gain.
  • Low noise figure.
  • Integrated temperature compensated biasing.
  • Control pin for adjustment bias current.
  • Supply and RF output pin combined.