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BLF573 - HF / VHF power LDMOS transistor

Download the BLF573 datasheet PDF. This datasheet also covers the BLF573S variant, as both devices belong to the same hf / vhf power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (BLF573S_NXPSemiconductors.pdf) that lists specifications for multiple related part numbers.

General Description

A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.

Table 1.

Production test information Mode of operation f VDS PL Gp ηD (MHz) (V) (W) (dB) (%) CW 225 50 300 27.2 70 CAUTION This device is sensitive to ElectroStatic Discharge (ESD).

Overview

BLF573; BLF573S HF / VHF power LDMOS transistor Rev.

3 — 8 July 2010 Product data sheet 1.

Product profile 1.

Key Features

  • Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: ‹ Average output power = 300 W ‹ Power gain = 27.2 dB ‹ Efficiency = 70 %.
  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (HF and VHF band).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Ampleon Logo BLF573 Power LDMOS transistor Ampleon
Ampleon Logo BLF573S Power LDMOS transistor Ampleon

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