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BLF6G20-110 Datasheet - NXP Semiconductors

Power LDMOS transistor

BLF6G20-110 Features

* I Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 900 mA: N Average output power = 25 W N Power gain = 19 dB N Efficiency = 31 % N IMD3 =

* 37 dBc N ACPR =

* 40 dBc I Easy power control I Integrated ESD protection I Ex

BLF6G20-110 General Description

110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 1930 to 1990 VDS (V) 28 PL(AV) (W) .

BLF6G20-110 Datasheet (110.85 KB)

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Datasheet Details

Part number:

BLF6G20-110

Manufacturer:

NXP ↗ Semiconductors

File Size:

110.85 KB

Description:

Power ldmos transistor.
www.DataSheet4U.com BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev. 01 28 January 2008 Preliminary data sheet 1. Product profile 1.1.

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BLF6G20-110 Power LDMOS transistor NXP Semiconductors

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