BLF6G20-230PRN Datasheet - NXP Semiconductors

Power LDMOS transistor

BLF6G20-230PRN Features

* I Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 28 V and an IDq of 2000 mA: N Average output power = 50 W N Power gain = 16.5 dB (typ) N Efﬁciency = 29.5 % N ACPR =

* 35 dBc I Easy power control I Integrated ESD protection I Excellent rugged

BLF6G20-230PRN General Description

230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 1805 to 1880 VDS (V) 28 PL(AV) (W) .

BLF6G20-230PRN Datasheet (84.44 KB)

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BLF6G20-230PRN

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NXP ↗ Semiconductors

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84.44 KB

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Power ldmos transistor.
www.DataSheet4U.com BLF6G20-230PRN Power LDMOS transistor Rev. 01 2 December 2008 Objective data sheet 1. Product proﬁle 1.1 General descr.

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BLF6G20-230PRN Power LDMOS transistor NXP Semiconductors

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BLF6G20-230PRN Features

BLF6G20-230PRN General Description

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