BLF6G20LS-110, BLF6G20-110 Datasheet - NXP Semiconductors

BLF6G20LS-110 Power LDMOS transistor

110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 1930 to 1990 VDS (V) 28 PL(AV) (W) .

BLF6G20LS-110 Features

* I Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 900 mA: N Average output power = 25 W N Power gain = 19 dB N Efﬁciency = 31 % N IMD3 =

* 37 dBc N ACPR =

* 40 dBc I Easy power control I Integrated ESD protection I Ex

BLF6G20-110_NXPSemiconductors.pdf