Datasheet Details
| Part number | BLF6G22-45 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 98.85 KB |
| Description | Power LDMOS transistor |
| Datasheet |
 BLF6G22-45 Datasheet
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General Description
45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Table 1.
Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Key Features
- I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 405 mA: N Average output power = 2.5 W N Power gain = 18.5 dB (typ) N Efficiency = 13 % N ACPR =.
- 49 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (2000 MHz to 2200 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restrict.
