Description
10 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
49[2]
ACPR1980k (dBc)
64[2]
Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13).PAR = 9.7 dB at 0.01 % probab
Features
- I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and an IDq of 130 mA: I Qualified up to a maximum VDS operation of 32 V I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation I Internally matched for ease of use I Low gold plating thicknes.
BLF6G27-10_NXPSemiconductors.pdf
