Datasheet Details
| Part number | BLF6G27-10 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 141.76 KB |
| Description | WiMAX power LDMOS transistor |
| Datasheet |
 BLF6G27-10 Datasheet
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General Description
10 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Table 1.
Typical performance RF performance at Tcase = 25 °C in a class-AB production test circuit.
Key Features
- I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and an IDq of 130 mA: I Qualified up to a maximum VDS operation of 32 V I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation I Internally matched for ease of use I Low gold plating thicknes.
