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BLF6G27-10G Datasheet - NXP Semiconductors

WiMAX power LDMOS transistor

BLF6G27-10G Features

* I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and an IDq of 130 mA: I Qualified up to a maximum VDS operation of 32

BLF6G27-10G General Description

10 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 2500 to 2700 VDS (V) 28 PL(AV) (W) 2 Gp (d.

BLF6G27-10G Datasheet (141.76 KB)

Preview of BLF6G27-10G PDF

Datasheet Details

Part number:

BLF6G27-10G

Manufacturer:

NXP ↗ Semiconductors

File Size:

141.76 KB

Description:

Wimax power ldmos transistor.
BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 01 4 February 2009 www.DataSheet4U.com Product data sheet 1. Product profile 1.1.

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BLF6G27-10G WiMAX power LDMOS transistor NXP Semiconductors

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