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BLF882S - UHF power LDMOS transistor

Download the BLF882S datasheet PDF. This datasheet also covers the BLF882 variant, as both devices belong to the same uhf power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (BLF882-NXPSemiconductors.pdf) that lists specifications for multiple related part numbers.

General Description

A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

The transistor can deliver 200 W in broadband applications from HF to 860 MHz.

The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

Overview

BLF882; BLF882S UHF power LDMOS transistor Rev.

2 — 3 July 2015 Product data sheet 1.

Product profile 1.

Key Features

  • Integrated ESD protection.
  • Excellent ruggedness.
  • High power gain.
  • High efficiency.
  • Excellent reliability.
  • Easy power control.
  • Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3.