BLF888B - UHF power LDMOS transistor

NXP Semiconductors

Datasheet Details

A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

Table 1.

BLF888B; BLF888BS UHF power LDMOS transistor Rev.

2 — 12 July 2013 Product data sheet 1.

Product profile 1.

Excellent ruggedness.
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W.
High power gain.
High efficiency.
Designed for broadband operation (470 MHz to 860 MHz).
Internal input matching for high gain and optimum broadband operation.
Excellent reliability.
Easy power control.
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3.

Part Number	Description	Manufacturer
BLF888B	Power LDMOS transistor	Ampleon
BLF888BS	Power LDMOS transistor	Ampleon
BLF888	UHF Power LDMOS Transistor	NXP
BLF888A	Power LDMOS transistor	Ampleon
BLF888A	UHF Power LDMOS Transistor	NXP